Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
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چکیده
منابع مشابه
Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
SnS, GeSe, and GeS Ruixiang Fei, Wenbin Li, Ju Li, and Li Yang Department of Physics, Washington University, St. Louis, Missouri 63130, USA Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridg...
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Paul Z. Hanakata,1 Alexandra Carvalho,2 David K. Campbell,1,* and Harold S. Park3,† 1Department of Physics, Boston University, Boston, Massachusetts 02215, USA 2Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore 3Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215, USA (Received 1...
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KEYWORDS piezoelectricity, two-dimensional (2D) material, monochalcogenide, density functional theory (DFT) calculation ABSTRACT It is found that several layer-phase group-III monochalcogenides, including GaS, GaSe, and InSe, are piezoelectric in their monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe, and InSe (2.06, 2.30, and 1.46 ...
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2014 The crystal structure of SnS has been investigated as a function of temperature by elastic neutron scattering from 293 K to 1 000 K. SnS undergoes a second order displacive phase transition from the 03B1-phase (B16, Pbnm) to the high temperature 03B2-phase (B33, Cmcm) at 887 K. The mean square displacement of the Sn atom which is isotropic at room temperature becomes increasingly anisotrop...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2015
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4934750